Infineon Technologies FF450R45T3E4B5BPSA1
- FF450R45T3E4B5BPSA1
- Infineon Technologies
- The FF450R45T3E4B5BPSA1 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.35 V, DC Collector Current 450 A, Peak Collector Current 900 A, Gate Emitter Leakage Current 400 nA. More details for FF450R45T3E4B5BPSA1 can be seen below.
- IGBTs-AC
- FF450R45T3E4B5BPSA1 Datenblatt
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Lead free / RoHS Compliant - 1003
- Spot-Inventar/autorisierte Händler/Werksüberschuss-Inventar
- 1-Jahres-Qualitätssicherung 》
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| Teilenummer FF450R45T3E4B5BPSA1 |
| Kategorie IGBTs-AC |
| Hersteller Infineon Technologies |
| Beschreibung The FF450R45T3E4B5BPSA1 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.35 V, DC Collector Current 450 A, Peak Collector Current 900 A, Gate Emitter Leakage Current 400 nA. More details for FF450R45T3E4B5BPSA1 can be seen below. |
| Betriebstemperatur 900 A |
| Paket/Koffer - |
| Technologie 10.4kV isolation ; Phase leg |
| Product line 3 Weeks |
| RoHS Status Active |
| Pbfree Code ROHS3 Compliant |
| Product status yes |
| Cooling Concept Traction drives, Medium-voltage converters |
| Gate Emitter Voltage 4500 V Dual IGBT Module |
| DC Collector Current -20 to 20 V |
| Gate Emitter Leakage Current 450 A |
| Collector Emitter Voltage 400 nA |
| Marking Code 4500 V |
| Saturated Collector Emitter Voltage Field Stop Trench IGBT |
| Peak Collector Current 2.35 V |
| Power Dissipation -40 to 150 Degree C |
| Packing Info 1500 kW |
| Infineon Package name Dual |
| Series production AG-XHP3K45 |
FF450R45T3E4B5BPSA1 Garantien



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Infineon Technologies

Founded on April 1, 1999, Infineon Technologies is a leading global semiconductor company and one of the largest semiconductor product manufacturers in Germany. The company is headquartered in Munich, Germany, and its predecessor was the...
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