GeneSiC Semiconductor MSRTA20060(A)D
- MSRTA20060(A)D
- GeneSiC Semiconductor
- DIODE GEN PURP 600V 200A 3 TOWER
- Diodes - Rectifiers - Arrays
- MSRTA20060(A)D Datenblatt
- Three Tower
- Bulk
- Lead free / RoHS Compliant
- 2870
- Spot-Inventar/autorisierte Händler/Werksüberschuss-Inventar
- 1-Jahres-Qualitätssicherung 》
- Klicken Sie hier, um Preise zu erhalten
Part Number MSRTA20060(A)D |
Category Diodes - Rectifiers - Arrays |
Manufacturer GeneSiC Semiconductor |
Description DIODE GEN PURP 600V 200A 3 TOWER |
Package Bulk |
Series - |
Mounting Type Chassis Mount |
Package / Case Three Tower |
Supplier Device Package Three Tower |
Diode Type Standard |
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 200 A |
Current - Reverse Leakage @ Vr 10 µA @ 600 V |
Diode Configuration 1 Pair Series Connection |
Voltage - DC Reverse (Vr) (Max) 600 V |
Current - Average Rectified (Io) (per Diode) 200A |
Speed Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) - |
Operating Temperature - Junction -55°C ~ 150°C |
Package_case Three Tower |
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