Beschreibung:The FF450R45T3E4B5BPSA1 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.35 V, DC Collector Current 450 A, Peak Collector Current 900 A, Gate Emitter Leakage Current 400 nA. More details for FF450R45T3E4B5BPSA1 can be seen below.